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HFD1N80

N-Channel MOSFET

Description

HFD1N80 / HFU1N80 April 2006 HFD1N80 / HFU1N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 13 Ω ID = 1.0 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 7.5 nC (Typ.)  Extended Safe Operating ...

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