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HFG1N80

N-Channel MOSFET

Description

HFG1N80_Preliminary HFG1N80 800V N-Channel MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 7.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 13 Ω (Typ.) @VGS=10V Preliminary Aug 2008 ...

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