HFS4N65

HFS4N65 April 2006 HFS4N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 2.3 Ω ID = 3.6* A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 15 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.3 Ω (Typ.) @VGS=10V  100% Avalanche Tested TO-220F 12 3 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC = 25℃) - Derate above 25℃ TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Drain current limited by maximum junction temperature 650 3.6* 2.3* 14.4* ±30 240 3.6 10 5.5 33 0.26 -55 to +150 300 Thermal Resistance Characteristics Symbol RθJC RθJA Junction-to-Case Parameter Junction-to-Ambient Typ. --- Max. 3.79 62.5 Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ Units ℃/W ◎ SEMIHOW REV.A0,April 2006 HFS4N65 Electrical Characteristics TC=25 °C unless otherwise specified Symbol Parameter Test Conditio...