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HFH19N60
N-Channel MOSFET
Description
HFH19N60 OCT 2009 HFH19N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 18.5 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 95 nC (Typ.) Extended Safe Operating Area Lower RDS(ON...
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HFH19N60
N-Channel MOSFET
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