HFP12N60S

HFP12N60S Nov 2007 HFP12N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 0.53 ȍ ID = 12 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 38 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.53 ȍ (Typ.) @VGS=10V ‰ 100% Avalanche Tested TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 600 12 7.4 48 ρ30 870 12 22.5 4.5 PD TJ, TSTG TL Power Dissipation (TC = 25୅) - Derate above 25୅ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 225 1.78 -55 to +150 300 Units V A A A V mJ A mJ V/ns W W/୅ ୅ ୅ Thermal Resistance Characteristics Symbol RșJC RșCS RșJA Parameter Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -- Max. 0.56 -62.5 Units ୅/W క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͨ͡͡ HFP12N60S Electrical Characteristics TC=25 qC unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) G...