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HFS8N60S
N-Channel MOSFET
Description
HFS8N60S Dec 2006 HFS8N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 7.5 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS(ON...
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