HFP11N40

HFP11N40 HFP11N40 400V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 35 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.38 Ω (Typ.) @VGS=10V Dec 2005 BVDSS = 400 V RDS(on) typ = 0.38 Ω ID = 11.4 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 400 11.4 7.2 45.6 ±30 520 11.4 14.7 4.5 PD TJ, TSTG TL Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 147 1.18 -55 to +150 300 Thermal Resistance Characteristics Symbol RθJC RθCS RθJA Junction-to-Case Parameter Case-to-Sink Junction-to-Ambient Typ. -0.5 -- Max. 0.85 -62.5 Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ Units ℃/W ◎ SEMIHOW REV.A0,Dec 2005 HFP11N40 Electrical Characteristics TC=25 °C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS Gate Threshold V...