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HFD2N60

N-Channel MOSFET

Description

HFD2N60_HFU2N60 July 2005 HFD2N60 / HFU2N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 1.8 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9.0 nC (Typ.) Extended Safe Operating Ar...

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