N-Channel MOSFET
HFS13N50S
March 2014
HFS13N50S
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) typ ȍ ID = 13 A
FEATURES
Origina...
Description
HFS13N50S
March 2014
HFS13N50S
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) typ ȍ ID = 13 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500 13* 8* 52* ρ30 560 13 19.5 4.5
PD
TJ, TSTG TL
Power Dissipation (TC = 25) - Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
48 0.39 -55 to +150
300
*Drain current limited by maximum junction temperature
Units V A A A V mJ A mJ
V/ns W
W/
Thermal Resistance Characteristics
Symbol RșJC
RșJA
Parameter Junction-to-Case Junction-to-Ambient
Typ. ---
Max. 2.58 62.5
Units /W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͢͝;ΒΣΔΙ͑ͣͥ͑͢͡
HFS13N50S
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions...
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