HFW9N50

HFW9N50_HFI9N50 June 2005 HFW9N50 / HFI9N50 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 0.58 Ω ID = 9.0 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 35 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.58 Ω (Typ.) @VGS=10V  100% Avalanche Tested D2-PAK I2-PAK HFW9N50 HFI9N50 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 500 9.0 5.7 36 ±30 360 9.0 14.7 4.5 PD TJ, TSTG TL Power Dissipation (TA = 25℃) * Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 3.13 147 1.18 -55 to +150 300 Units V A A A V mJ A mJ V/ns W W W/℃ ℃ ℃ Thermal Resistance Characteristics Symbol RθJC RθJA RθJA Junction-to-Case Parameter Junction-to-Ambient* Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) Typ. ---- Max. 0.85 40 62.5 Units ℃/W ◎ SEMIHOW REV.A0 June 2005 ...