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HFS5N50S Dataheets PDF



Part Number HFS5N50S
Manufacturers SemiHow
Logo SemiHow
Description N-Channel MOSFET
Datasheet HFS5N50S DatasheetHFS5N50S Datasheet (PDF)

HFS5N50S OCT 2008 HFS5N50S 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 1.2 Ω ID = 5.0 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 15.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.2 Ω (Typ.) @VGS=10V  100% Avalanche Tested TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise.

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HFS5N50S OCT 2008 HFS5N50S 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 1.2 Ω ID = 5.0 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 15.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.2 Ω (Typ.) @VGS=10V  100% Avalanche Tested TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 500 5.0* 2.9* 20* ±30 300 5.0 7.3 4.5 PD TJ, TSTG TL Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 38 0.3 -55 to +150 300 * Drain current limited by maximum junction temperature Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ Thermal Resistance Characteristics Symbol RθJC RθJA Junction-to-Case Parameter Junction-to-Ambient Typ. Max. Units -- 3.31 ℃/W -- 62.5 ◎ SEMIHOW REV.A0,Oct 2008 HFS5N50S Electrical Characteristics TC=25 °C unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 2.5 A 2.0 -- Off Characteristics BVDSS ΔBVDSS /ΔTJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to25℃ VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125℃ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 500 ----- -- Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---- Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 250 V, ID = 5.0 A, RG = 25 Ω (Note 4,5) VDS = 400V, ID = 5.0 A, VGS = 10 V (Note 4,5) -------- Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current ISM Pulsed Source-Drain Diode Forward Current VSD Source-Drain Diode Forward Voltage IS = 5.0 A, VGS = 0 V trr Reverse Recovery Time Qrr Reverse Recovery Charge IS = 5.0 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) ------ Typ Max Units -- 4.0 1.2 1.5 V Ω -- -- V 0.5 -- V/℃ -- 1 ㎂ -- 10 ㎂ -- 100 ㎁ -- -100 ㎁ 640 86 11.5 830 111 15 ㎊ ㎊ ㎊ 12 46 50 48 15.5 2.9 6.4 35 100 110 105 20 --- ㎱ ㎱ ㎱ ㎱ nC nC nC -- 5.0 -- 20 -- 1.4 263 -1.9 -- A V ㎱ μC Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=21.5mH, IAS=5.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤5.0A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,Oct 2008 HFS5N50S Typical Characteristics ID, Drain Current [A] ID, Drain Current [A] RDS(ON)[Ω], Drain-Source On-Resistance VDS, Drain-Source Voltage[V] Figure 1. On Region Characteristics VGS, Gate-Source Voltage[V] Figure 2. Transfer Characteristics IDR, Reverse Drain Current [A] ID, Drain Current [A] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] VSD, Source-Drain Voltage [V] Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 10 VDS = 100V VDS = 250V 8 VDS = 400V 6 4 2 ∗ Note : I = 5.0A D 0 0 4 8 12 16 20 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics ◎ SEMIHOW REV.A0,Oct 2008 Capacitance [pF] HFS5N50S Typical Characteristics (continued) BVDSS, (Normalized) Drain-Source Breakdown Voltage TJ, Junction Temperature [oC] Figure 7. Breakdown Voltage Variation vs Temperature 102 Operation in This Area is Limited by R DS(on) 100 µs 101 1 ms 10 ms 100 ms 100 DC 10-1 10-2 100 * Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse 101 102 103 VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area RDS(ON), (Normalized) Drain-Source On-Resistance ID, Drain Current [A] 2.5 2.0 1.5 1.0 0.5 0.0 -100 ∗ Note : 1. VGS = 10 V 2. ID = 2.5 A -50 0 50 100 150 TJ, Junction Temperature [oC] 200 Figure 8. On-Resistance Variation vs Temperature 5 4 3 2 1 0 25 50 75 100 125 TC, Case Temperature [oC] Figure 10. Maximum Drain Current vs Case Temperature 150 ID, Drain Current [A] ZθJC(t), Thermal Response D=0.5 100 .


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