Document
HFS5N50S
OCT 2008
HFS5N50S
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) typ = 1.2 Ω ID = 5.0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.2 Ω (Typ.) @VGS=10V 100% Avalanche Tested
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃) – Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500 5.0* 2.9* 20* ±30 300 5.0 7.3 4.5
PD
TJ, TSTG TL
Power Dissipation (TC = 25℃) - Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
38 0.3 -55 to +150
300
* Drain current limited by maximum junction temperature
Units V A A A V mJ A mJ
V/ns W W/℃ ℃
℃
Thermal Resistance Characteristics
Symbol RθJC RθJA
Junction-to-Case
Parameter
Junction-to-Ambient
Typ.
Max.
Units
-- 3.31 ℃/W
-- 62.5
◎ SEMIHOW REV.A0,Oct 2008
HFS5N50S
Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS RDS(ON)
Gate Threshold Voltage Static Drain-Source On-Resistance
VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 2.5 A
2.0 --
Off Characteristics
BVDSS ΔBVDSS
/ΔTJ IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to25℃ VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125℃ VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
500 -----
--
Dynamic Characteristics
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
----
Switching Characteristics
td(on) Turn-On Time tr Turn-On Rise Time
td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge
Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDS = 250 V, ID = 5.0 A, RG = 25 Ω
(Note 4,5)
VDS = 400V, ID = 5.0 A, VGS = 10 V
(Note 4,5)
--------
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 5.0 A, VGS = 0 V
trr Reverse Recovery Time Qrr Reverse Recovery Charge
IS = 5.0 A, VGS = 0 V diF/dt = 100 A/μs (Note 4)
------
Typ Max Units
-- 4.0 1.2 1.5
V Ω
-- -- V 0.5 -- V/℃ -- 1 ㎂ -- 10 ㎂ -- 100 ㎁
-- -100 ㎁
640 86 11.5
830 111 15
㎊ ㎊ ㎊
12 46 50 48 15.5 2.9 6.4
35 100 110 105 20
---
㎱ ㎱ ㎱ ㎱ nC nC nC
-- 5.0 -- 20 -- 1.4 263 -1.9 --
A
V ㎱ μC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=21.5mH, IAS=5.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤5.0A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature
◎ SEMIHOW REV.A0,Oct 2008
HFS5N50S
Typical Characteristics
ID, Drain Current [A]
ID, Drain Current [A]
RDS(ON)[Ω], Drain-Source On-Resistance
VDS, Drain-Source Voltage[V]
Figure 1. On Region Characteristics
VGS, Gate-Source Voltage[V]
Figure 2. Transfer Characteristics
IDR, Reverse Drain Current [A]
ID, Drain Current [A]
Figure 3. On Resistance Variation vs Drain Current and Gate Voltage
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
12
10 VDS = 100V VDS = 250V
8 VDS = 400V
6
4
2 ∗ Note : I = 5.0A
D
0 0 4 8 12 16 20
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Oct 2008
Capacitance [pF]
HFS5N50S
Typical Characteristics (continued)
BVDSS, (Normalized) Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation vs Temperature
102 Operation in This Area is Limited by R DS(on)
100 µs 101
1 ms
10 ms 100 ms 100 DC
10-1 10-2
100
* Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse
101
102
103
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
RDS(ON), (Normalized) Drain-Source On-Resistance
ID, Drain Current [A]
2.5
2.0
1.5
1.0
0.5
0.0 -100
∗ Note : 1. VGS = 10 V 2. ID = 2.5 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation vs Temperature
5
4
3
2
1
0 25 50 75 100 125
TC, Case Temperature [oC]
Figure 10. Maximum Drain Current vs Case Temperature
150
ID, Drain Current [A]
ZθJC(t), Thermal Response
D=0.5
100 .