HFP640

Shantou Huashan Electronic Devices Co.,Ltd. HFP640 N-Channel Enhancement Mode Field Effect Transistor █ General Description These power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. And DC-DC&DC-AC Converters for Telecom,Industrial and Consumer Environment TO-220 █ Features 1- G 2-D 3-S 18A,200V,RDS(on) <0.18Ω@VGS =10 V Fast switching 100% avalanche tested Improved dv/dt capability Equivalent Type:IRF640 █ Maximum Ratings（Ta=25℃ unless otherwise specified） Tstg——Storage Temperature ------------------------------------------------------ -55~150℃ Tj ——Operating Junction Temperature -------------------------------------------------- 150℃ VDSS —— Drain-Source Voltage ---------------------------------------------------------- 200V VDGR —— Drain-Gate Voltage (RGS=20kΩ) ------------------------------------------------------------ 200V VGSS —— Gate-Source Voltage ------------------------------------------------------------------------ ±20V ID —— Drain Current (Continuous) ------------------------------------------------------------------- 18A PD —— Maximum Power Dissipation ------------------------------------------------------------- 125W IAR —— Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, d < 1%) ------------------------------------------------------ 18A EAS—— Single Pulse Avalanche Energy (starting Tj = 25℃, ID = IAR, VDD = 50 ...