ME9926

Aonetek Semiconductor Co., LTD. Dual N-Channel High Density Trench MOSFET ME9926 PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 6.0A 28 @ VGS = 4.5V 20V 5.2A 44 @ VGS = 2.5V FEATURES ●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Ideal for Li ion battery pack application. SOP-8 D1 D1 D2 D2 876 5 1 123 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousa @ TA = 25 °C -Pulse b Drain-Source Diode Forward Currenta Maximum Power Dissipationa TA=25°C TA=75°C Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit 20 ± 12 6 24 1.7 2.0 1.3 - 55 to 150 Unit V V A A A W °C THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambienta Note a. Surface Mounted on FR4 Board , t ≤ 10sec . b. Pulse width limited by maximum junction temperature. RthJA 62.5 °C/W ME9926 ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) Parameter Symbol Condition Min Typc Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V , ID = 250uA 20 V Zero Gate Voltage Drain Current IDSS VDS = 20V , VGS = 0V 1 uA Gate-Body Leakage b ON CHARACTERISTICS IGSS VGS = ±12V, VDS = 0V ±100 nA Gate Threshold Voltage VGS(th) VDS = VGS , ID = 250uA 0.6 0.9 1.5 V Drain-Source On-State Resistance RDS(on) VGS = 4.5V , ID = 6A VGS = 2.5V , ID = 5.2A DRAIN-SOURCE DIODE CHARACTERISTICS b 22...