Dual N-Channel 20V (D-S) MOSFET
ME9926/ME9926-G
GENERAL DESCRIPTION
The ME9926 is the Dual N-Channel logic enhancement...
Dual N-Channel 20V (D-S) MOSFET
ME9926/ME9926-G
GENERAL DESCRIPTION
The ME9926 is the Dual N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where switching and low in-line power loss are needed in a very small outline surface mount package.
FEATURES
● RDS(ON)≦29mΩ@VGS=4.5V
● RDS(ON)≦42mΩ@VGS=2.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC
PIN CONFIGURATION
(SOP-8) Top View
e Ordering Information: ME9926 (Pb-free)
ME9926-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current*
Pulsed Drain Current
Maximum Power Dissipation*
Operating Junction Temperature
TA=25℃ TA=70℃
TA=25℃ TA=70℃
Thermal Resistance-Junction to Ambient*
Symbol VDSS VGSS ID
IDM PD
TJ RθJA
10sec
SteadyState
20
±12
6.6 5.2
5.2 4.2
30
2.0 1.25
1.2 0.8
-55 to 150
Typ 45 Typ 80
Max 62.5 Max 100
e * The device mounted on 1in2 FR4 board with 2 oz copper
Unit V V
A A W
℃
℃/W
Feb, 2009-V...