Dual N-Channel 2.5-V (G-S) MOSFET
GENERAL DESCRIPTION
The ME9926 is the Dual N-Channel logic enhancement mode power fiel...
Dual N-Channel 2.5-V (G-S) MOSFET
GENERAL DESCRIPTION
The ME9926 is the Dual N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
ME9926
FEATURES
● RDS(ON)≦29mΩ@VGS=4.5V ● RDS(ON)≦42mΩ@VGS=2.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC
PIN CONFIGURATION
(SOP-8) Top View
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Temperature
TA=25℃ TA=70℃
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Case
Symbol VDSS VGSS ID IDM
PD
TJ
RθJA
RθJC
Steady State
20
±12
6
28
2.0
1.2
-55 to 150
T≦10 sec
62.5
Steady State
88
50
e * The device mounted on 1in2 FR4 board with 2 oz copper
Unit V V A A
W
℃
℃/W
℃/W
July, 2008-Ver1.1
01
Dual N-Channel 2.5-V (G-S) MOSFET
ME9926
Electrical Characte...