ME9926

Dual N-Channel 2.5-V (G-S) MOSFET GENERAL DESCRIPTION The ME9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. ME9926 FEATURES ● RDS(ON)≦29mΩ@VGS=4.5V ● RDS(ON)≦42mΩ@VGS=2.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC PIN CONFIGURATION (SOP-8) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature TA=25℃ TA=70℃ Thermal Resistance-Junction to Ambient* Thermal Resistance-Junction to Case Symbol VDSS VGSS ID IDM PD TJ RθJA RθJC Steady State 20 ±12 6 28 2.0 1.2 -55 to 150 T≦10 sec 62.5 Steady State 88 50 e * The device mounted on 1in2 FR4 board with 2 oz copper Unit V V A A W ℃ ℃/W ℃/W July, 2008-Ver1.1 01 Dual N-Channel 2.5-V (G-S) MOSFET ME9926 Electrical Characte...