NCE0203S

http://www.ncepower.com Pb Free Product NCE0203S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0203S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =200V,ID =3.9A RDS(ON) < 79mΩ @ VGS=10V （Typ：56mΩ） ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% ∆Vds TESTED! SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package 0203 NCE0203S SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Limit 200 ±20 3.9 3 30 3 -55 To 150 Unit V V A A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 41.7 ℃/W Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.1 http://www.ncepower.com Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristic...