Document
http://www.ncepower.com
Pb Free Product
NCE15H11T
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE15H11T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications.
General Features
● VDSS =150V,ID =110A RDS(ON) < 13mΩ @ VGS=10V (Typ:10 mΩ)
● Good stability and uniformity with high EAS ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation
Schematic diagram
Application
● Automotive applications ● Hard switched and high frequency circuits ● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-247 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE15H11T
NCE15H11T
TO-247
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current Maximum Power Dissipation
IDM PD
Derating factor
Single pulse avalanche energy (Note 3) Peak Diode Recovery dv/dt (Note 4)
EAS dv/dt
Limit
150 ±20 110 80 390 385 2.57 1800
3
Unit
V V A A A W W/℃ mJ V/ns
Wuxi NCE Power Semiconductor Co., Ltd
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Pb Free Product
NCE15H11T
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 175
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 1)
RθJC
0.39 ℃/W
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current
BVDSS IDSS IGSS
VGS=0V ID=250μA VDS=150V,VGS=0V VGS=±20V,VDS=0V
150 160 ---
1 ±200
V μA nA
On Characteristics
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
23
4
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=40A
- 10 13 mΩ
Forward Transconductance
gFS
VDS=50V,ID=40A
50 -
-
S
Dynamic Characteristics
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Clss Coss
VDS=25V,VGS=0V, F=1.0MHz
- 16500 - 1344
-
PF PF
Crss
- 1025
-
PF
Switching Characteristics
Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
td(on) tr
td(off) tf Qg
Qgs Qgd
VDD=30V,ID=2A,RL=15Ω VGS=10V,RG=2.5Ω(Note2)
VDS=30V,ID=30A, VGS=10V (Note2)
- 20 - 130 - 50 - 60 - 377 - 79 - 118
-
nS nS nS nS nC nC nC
Drain-Source Diode Characteristics
Diode Forward Voltage
Reverse Recovery Time Reverse Recovery Charge
VSD
VGS=0V,IS=40A
- - 1.2
V
trr
TJ = 25°C, IF = 40A
- 60
-
nS
Qrr
di/dt = 100A/μs(Note2)
- 90
-
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Surface Mounted on FR4 Board, t ≤ 10 sec. 2. Pulse Test: Pulse Width ≤ 400μs, Duty Cycle ≤ 2%. 3. EAS condition:Tj=25℃,VDD=75V,VG=10V,L=2mH,Rg=25Ω 4. ISD≤125A, di/dt≤260A/μs, VDD≤V(BR)DSS,TJ ≤175°C
Wuxi NCE Power Semiconductor Co., Ltd
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Test circuit
1)EAS test Circuits
Pb Free Product
NCE15H11T
2)Gate charge test Circuit:
3)Switch Time Test Circuit:
Wuxi NCE Power Semiconductor Co., Ltd
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http://www.ncepower.com Typical Electrical and Thermal Characteristics
Pb Free Product
NCE15H11T
Normalized On-Resistance
ID- Drain Current (A)
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 1 Output Characteristics
TJ-Junction Temperature(℃)
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Figure 2 Transfer Characteristics
Qg Gate Charge (nC)
Figure 5 Gate Charge
Is- Reverse Drain Current (A)
ID- Drain Current (A)
Figure 3 Rdson- Drain Current
Vsd Source-Drain Voltage (V)
Figure 6 Source- Drain Diode Forward
Wuxi NCE Power Semiconductor Co., Ltd
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Rdson On-Resistance(mΩ)
http://www.ncepower.com
Pb Free Product
NCE15H11T
Normalized BVds
C Capacitance (pF)
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 9 BVDSS vs Junction Temperature
Vth , ( V )
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 VGS(th) vs Junction Temperature
r(t),Normalized Effective Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
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v1.2
http://www.ncepower.com TO-247 Package Information
Pb Free Product
NCE15H11T
Symbol
A A1 b b1 b2 c c1 D E1 E2 L L1 L2 Φ e H
Dimensions In Millimeters
Min. 4.850
Max. 5.150
2.200
2.600
1.000
1.400
2.800
3.200
1.800
2.200
0.500
0.700
1.900
2.100
15.450.