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NCE15H11T Dataheets PDF



Part Number NCE15H11T
Manufacturers NCE Power Semiconductor
Logo NCE Power Semiconductor
Description NCE N-Channel Enhancement Mode Power MOSFET
Datasheet NCE15H11T DatasheetNCE15H11T Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCE15H11T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE15H11T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features ● VDSS =150V,ID =110A RDS(ON) < 13mΩ @ VGS=10V (Typ:10 mΩ) ● Good stability and uniformity with high EAS ● Special process technology for high ESD capability ● High density cell desi.

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http://www.ncepower.com Pb Free Product NCE15H11T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE15H11T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features ● VDSS =150V,ID =110A RDS(ON) < 13mΩ @ VGS=10V (Typ:10 mΩ) ● Good stability and uniformity with high EAS ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Schematic diagram Application ● Automotive applications ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-247 top view Package Marking and Ordering Information Device Marking Device Device Package NCE15H11T NCE15H11T TO-247 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation IDM PD Derating factor Single pulse avalanche energy (Note 3) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt Limit 150 ±20 110 80 390 385 2.57 1800 3 Unit V V A A A W W/℃ mJ V/ns Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.2 http://www.ncepower.com Pb Free Product NCE15H11T Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 1) RθJC 0.39 ℃/W Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current BVDSS IDSS IGSS VGS=0V ID=250μA VDS=150V,VGS=0V VGS=±20V,VDS=0V 150 160 --- 1 ±200 V μA nA On Characteristics Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 23 4 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=40A - 10 13 mΩ Forward Transconductance gFS VDS=50V,ID=40A 50 - - S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Clss Coss VDS=25V,VGS=0V, F=1.0MHz - 16500 - 1344 - PF PF Crss - 1025 - PF Switching Characteristics Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge td(on) tr td(off) tf Qg Qgs Qgd VDD=30V,ID=2A,RL=15Ω VGS=10V,RG=2.5Ω(Note2) VDS=30V,ID=30A, VGS=10V (Note2) - 20 - 130 - 50 - 60 - 377 - 79 - 118 - nS nS nS nS nC nC nC Drain-Source Diode Characteristics Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VSD VGS=0V,IS=40A - - 1.2 V trr TJ = 25°C, IF = 40A - 60 - nS Qrr di/dt = 100A/μs(Note2) - 90 - nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Surface Mounted on FR4 Board, t ≤ 10 sec. 2. Pulse Test: Pulse Width ≤ 400μs, Duty Cycle ≤ 2%. 3. EAS condition:Tj=25℃,VDD=75V,VG=10V,L=2mH,Rg=25Ω 4. ISD≤125A, di/dt≤260A/μs, VDD≤V(BR)DSS,TJ ≤175°C Wuxi NCE Power Semiconductor Co., Ltd Page 2 v1.2 http://www.ncepower.com Test circuit 1)EAS test Circuits Pb Free Product NCE15H11T 2)Gate charge test Circuit: 3)Switch Time Test Circuit: Wuxi NCE Power Semiconductor Co., Ltd Page 3 v1.2 http://www.ncepower.com Typical Electrical and Thermal Characteristics Pb Free Product NCE15H11T Normalized On-Resistance ID- Drain Current (A) ID- Drain Current (A) Vds Drain-Source Voltage (V) Figure 1 Output Characteristics TJ-Junction Temperature(℃) Figure 4 Rdson-JunctionTemperature Vgs Gate-Source Voltage (V) Vgs Gate-Source Voltage (V) Figure 2 Transfer Characteristics Qg Gate Charge (nC) Figure 5 Gate Charge Is- Reverse Drain Current (A) ID- Drain Current (A) Figure 3 Rdson- Drain Current Vsd Source-Drain Voltage (V) Figure 6 Source- Drain Diode Forward Wuxi NCE Power Semiconductor Co., Ltd Page 4 v1.2 Rdson On-Resistance(mΩ) http://www.ncepower.com Pb Free Product NCE15H11T Normalized BVds C Capacitance (pF) ID- Drain Current (A) Vds Drain-Source Voltage (V) Figure 7 Capacitance vs Vds TJ-Junction Temperature(℃) Figure 9 BVDSS vs Junction Temperature Vth , ( V ) Vds Drain-Source Voltage (V) Figure 8 Safe Operation Area TJ-Junction Temperature(℃) Figure 10 VGS(th) vs Junction Temperature r(t),Normalized Effective Transient Thermal Impedance Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance Wuxi NCE Power Semiconductor Co., Ltd Page 5 v1.2 http://www.ncepower.com TO-247 Package Information Pb Free Product NCE15H11T Symbol A A1 b b1 b2 c c1 D E1 E2 L L1 L2 Φ e H Dimensions In Millimeters Min. 4.850 Max. 5.150 2.200 2.600 1.000 1.400 2.800 3.200 1.800 2.200 0.500 0.700 1.900 2.100 15.450.


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