NCE01H21T

http://www.ncepower.com Pb Free Product NCE01H21T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H21T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of other applications. General Features ● VDSS =100V,ID =210A RDS(ON) < 4.0mΩ @ VGS=10V （Typ：3.1 mΩ） ● Good stability and uniformity with high EAS ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Schematic diagram Application ● DC motor drive ● High efficiency synchronous rectification in SMPS ● Uninterruptible power supply ● High speed power switching ● Hard switched and high frequency circuits Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-247 top view Package Marking and Ordering Information Device Marking Device Device Package NCE01H21T NCE01H21T TO-247 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation IDM PD Derating factor Single pulse avalanche energy (Note 3) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt Limit 100 ±20 210 160 850 385 2.57 2300 13 Unit V V A A A W W/℃ mJ V/ns Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.2 http://www.ncepower.com Pb...