NCE0106Z

http://www.ncepower.com Pb Free Product NCE0106Z NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0106Z uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation D G S Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply TO-92 view Package Marking and Ordering Information Device Marking Device Device Package 0106Z NCE0106Z TO-92 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 100 ±20 6 24 3 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS VGS=0V ID=250μA VDS=100V,VGS=0V 41.7 ℃/W Min Typ Max Unit 100 110 -- 1 V μA Wuxi NCE Power Semiconductor Co.,...