MDP5N50B

MDP5N50B / MDF5N50B N-channel MOSFET 500V MDP5N50B / MDF5N50B N-Channel MOSFET 500V, 5.0 A, 1.4Ω General Description The MDP/F5N50B uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP/F5N50B is suitable device for SMPS, HID and general purpose applications. Features VDS = 500V ID = 5.0A RDS(ON) ≤ 1.4Ω @VGS = 10V @VGS = 10V Applications Power Supply PFC Ballast Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg MDP5N50B MDF5N50B 500 ±30 5.0 5.0* 3.2 3.2* 20 20* 93 27 0.74 0.22 9.3 4.5 230 -55~150 Unit V V A A A W W/ oC mJ V/ns mJ oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Dec 2011. Version 1.0 Symbol RθJA RθJC MDP5N50B 62.5 1.35 MDF5N50B 62.5 4.6 Unit oC/W 1 MagnaChip Semiconductor Ltd. MDP5N50B / MDF5N50B N-channel MOSFET 500V Ordering Information Part Number MDP5N50BTH MDF5N50BTH Temp. Range -55~150oC -55~150oC Package TO-220 TO-220F Packing Tube Tube RoHS Status Halogen Free Halogen Free Electrical Charact...