N-CHANNEL ENHANCEMENT MODE MOSFET MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
AM2304 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET
DESCRIPTION
AM2304 is available ...
Description
AiT Semiconductor Inc.
www.ait-ic.com
AM2304 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET
DESCRIPTION
AM2304 is available in a SOT-23 package.
FEATURES
30V/5.1A RDS(ON)= 25mΩ(max.) @ VGS= 10V RDS(ON)= 35mΩ(max.) @ VGS= 4.5V
Reliable and Rugged Available in a SOT-23 package.
ORDERING INFORMATION
Package Type
Part Number
SOT-23
AM2304E3R E3
AM2304E3VR
Note
V: Halogen free Package R: Tape & Reel
AiT provides all RoHS products
Suffix “ V “ means Halogen free Package
APPLICATION
Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems.
Load Switch
PIN DESCRIPTION
N-Channel MOSFET
REV2.0
- DEC 2013 RELEASED, NOV 2014 UPDATED -
-1-
AiT Semiconductor Inc.
www.ait-ic.com
PIN DESCRIPTION
AM2304 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET
Pin # 1 2 3
Symbol G S D
Top View
Function Gate
Source Drain
REV2.0
- DEC 2013 RELEASED, NOV 2014 UPDATED -
-2-
AiT Semiconductor Inc.
www.ait-ic.com
AM2304 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25℃, unless otherwise noted VDSS, Drain-Source Voltage
30V
VGSS, Gate-Source Voltage
±20V
ID, Continuous Drain Current
TA=25℃ TA=70℃
5.1A 4.1A
IDM, 300μs Pulsed Drain Current
VGS=10V
20A
IS, Diode Continuous Forward Current
1.5A
TJ, Maximum Junction Temperature
150℃
TSTG, Storage Temperature Range
-55℃~150℃
PD, Maximum Power Dissipation
TA=25℃ TA=70℃
1W 0.64W
t ≤ 10sec. RθJANOTE1, Thermal Resistance-Junction to Ambient
Steady state
90°C/W 125°C/W
...
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