K2538

Power F-MOS FETs 2SK2538 Silicon N-Channel Power F-MOS s Features q Avalanche energy capability guaranteed q High-speed switching q No secondary breakdown s Applications q High-speed switching (switching mode regulator) q For high-frequency power amplification s Absolute Maximum Ratings (Tc = 25˚C) Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current DC Pulse Avalanche energy capability Allowable power dissipation TC= 25˚C Ta= 25˚C Channel temperature Storage temperature Symbol VDSS VGSS ID IDP EAS * PD Tch Tstg Rating 250 ±30 ±2 ±4 10 30 2 150 –55 to +150 * L= 5mH, IL= 2A, VDD= 30V, 1 pulse Unit V V A A mJ W ˚C ˚C s Electrical Characteristics (Tc = 25˚C) Parameter Drain-Source cut-off current Gate-Source leakage current Drain-Source breakdown voltage Gate threshold voltage Drain-Source ON-resistance Forward transadmittance Diode forward voltage Input capacitance Output capacitance Feedback capacitance Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Channel-Case heat resistance Channel-Atmosphere heat resistance Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Ciss Coss Crss td(on) tr tf td(off) Rth(ch-c) Rth(ch-a) Condition VDS= 200V, VGS= 0 VGS=±30V, VDS= 0 ID=1mA, VGS= 0 VDS=10V, ID=1mA VGS=10V, ID=1A VDS= 25V, ID=1A IDR= 2A, VGS= 0 VDS=10V, VGS= 0, f=1MHz VDD= 200V, ID= 2A VGS=10V, RL=100Ω 14.0±0.5 Solder Dip 4.0 16.7±0.3 7.5±0.2 0.7±0.1 2SK2538 10.0±0.2 5.5±0.2 Unit : mm 4.2±0.2 2.7±0.2 4.2±0.2 ø3.1±...