BA12004BF

Datasheet 7 Circuits Darlinton Transistor Array BA12003B BA12003BF BA12004B BA12004BF General Description BA12003B/BF,BA12004B/BFare darlinton transistor array consist of 7circuits, input resistor to limit base current and output surge absorption clamp diode. Features ■ Built-in 7 circuits ■ High output break down voltage ■ High DC output current gain ■ Built-in input resistor to limit base current ■ Built-in output surge absorption clamp diode Key Specifications ■ Output break down voltage： VCE=60V(max) ■ Output current： Io=500mA/ch(max) ■ Operating supply voltage range： -0.5V to +30V ■ Operating temperature range： -40°C to +85°C ■ DC current gain： hfe=1000(min) ■ Input resistor： BA12003B/BF Rin=2.7kΩ BA12004B/BF Rin=10.5kΩ Packages DIP16 SOP16 W(Typ) x D(Typ) x H(Max) 19.40mm x 6.50mm x 7.95mm 10.00mm x 6.20mm x 1.71mm Applications ■ Motor Drivers ■ LED Drivers ■ Solenoid Drivers ■ Low Side Switch Typical Application Circuit VCC VCC DIP16 SOP16 BA12003B / BA12004B BA12003BF / BA12004BF VCC 16 15 14 13 12 11 10 9 12345678 μCOM ○Product structure: Silicon monolithic integrated circuit www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 ○This product has not designed protection against radioactive rays 1/16 TSZ02201-0RCR0GZ00100-1-2 12.May.2015 Rev.002 BA12003B BA12003BF BA12004B BA12004BF Pin Configuration DIP16 / SOP16 (TOP VIEW) OUT 1 OUT 2 OUT 3 OUT 4 OUT 5 OUT OUT 67 COM 16 15 14 13 12 11 10 9 Block Diagram 16 15...