C5342

Semiconductor 2SC5342 NPN Silicon Transistor Description Medium power amplifier Features Large collector current : IC=500mA Low collector saturation voltage enabling low-voltage operation Complementary pair with 2SA1979 Ordering Information Type NO. 2SC5342 Marking C5342 Package Code TO-92 Outline Dimensions unit : mm 4.4~4.6 3.35~3.55 2.15~2.35 4.4~4.6 0.38~0.42 1.96~2.16 14.0±0.40 1.27 Typ. 2.54 Typ. 123 KST-9004-003 PIN Connections 1. Emitter 2. Collector 3. Base 1 1.1~1.3 0.38 2SC5342 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 40 32 5 500 625 150 -55~150 (Ta=25°C) Unit V V V mA mW °C °C Electrical Characteristics Characteristic Symbol Test Condition Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance * : hFE Rank / O : 70~140, Y : 120~240 BVCBO BVCEO BVEBO ICBO IEBO hFE* VCE(sat) fT Cob IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100mA IC=100mA, IB=10mA VCE=6V, IE=-20mA VCB=6V, IE=0, f=1MHz (Ta=25°C) Min. Typ. Max. Unit 40 - - V 32 - - V 5- - V - - 0.1 µA - - 0.1 µA 70 - 240 - - 0.25 V - 300 - MHz - 7.0...