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B884 Dataheets PDF



Part Number B884
Manufacturers Sanyo
Logo Sanyo
Description 2SB884
Datasheet B884 DatasheetB884 Datasheet (PDF)

Ordering number:1018E PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB884/2SD1194 Driver Applications Applications · Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Features · High DC current gain. · High current capacity and wide ASO. · Low saturation voltage. Package Dimensions unit:mm 2010C [2SB884/2SD1194] ( ) : 2SB884 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitte.

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Ordering number:1018E PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB884/2SD1194 Driver Applications Applications · Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Features · High DC current gain. · High current capacity and wide ASO. · Low saturation voltage. Package Dimensions unit:mm 2010C [2SB884/2SD1194] ( ) : 2SB884 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-to-Emitter Saturation Voltage Symbol Conditions ICBO IEBO hFE VCE(sat) VCB=(–)80V, IE=0 VEB=(–)5V, IC=0 VCE=(–)3V, IC=(–)1.5A IC=(–)1.5A, IB=(–)3mA Base-to-Emitter Saturation Voltage Gain-Bandwidth Product VBE(sat) IC=(–)1.5A, IB=(–)3mA fT VCE=(–)5V, IC=(–)1.5A JEDEC : TO-220AB 1 : Base EIAJ : SC-46 2 : Collector 3 : Emitter Ratings (–)110 (–)100 (–)6 (–)3 (–)5 1.75 30 150 –55 to +150 Unit V V V A A W W ˚C ˚C Ratings min typ 1500 4000 0.9 (–1.0) 20 max (–)0.1 (–)3 (–)1.5 (–)2.0 Unit mA mA V V V MHz Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 91098HA (KT)/10996TS (KOTO) 8-4529/D251MH/4027KI/D222KI No.1018–1/4 Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Turn-ON Time Storage Time Fall Time Switching Time Test Circuit 2SB884/2SD1194 Symbol Conditions V(BR)CBO V(BR)CEO ton IC=(–)5mA, IE=0 IC=(–)50mA, RBE=∞ See specified Test Circuit tstg See specified Test Circuit tf See specified Test Circuit Electrical Connection Ratings min typ (–)110 (–)100 (0.8) 0.7 (2.4) 5.0 (1.2) 1.2 max Unit V V µs µs µs µs µs µs No.1018–2/4 2SB884/2SD1194 No.1018–3/4 2SB884/2SD1194 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in .


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