Document
Ordering number:1018E
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
2SB884/2SD1194
Driver Applications
Applications
· Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.
Features
· High DC current gain. · High current capacity and wide ASO. · Low saturation voltage.
Package Dimensions
unit:mm 2010C
[2SB884/2SD1194]
( ) : 2SB884
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO IEBO hFE VCE(sat)
VCB=(–)80V, IE=0 VEB=(–)5V, IC=0 VCE=(–)3V, IC=(–)1.5A IC=(–)1.5A, IB=(–)3mA
Base-to-Emitter Saturation Voltage Gain-Bandwidth Product
VBE(sat) IC=(–)1.5A, IB=(–)3mA fT VCE=(–)5V, IC=(–)1.5A
JEDEC : TO-220AB 1 : Base
EIAJ : SC-46
2 : Collector
3 : Emitter
Ratings (–)110 (–)100 (–)6 (–)3 (–)5 1.75 30 150
–55 to +150
Unit V V V A A W W ˚C ˚C
Ratings min typ
1500
4000 0.9
(–1.0)
20
max (–)0.1
(–)3
(–)1.5
(–)2.0
Unit
mA mA
V V V MHz
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/10996TS (KOTO) 8-4529/D251MH/4027KI/D222KI No.1018–1/4
Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Turn-ON Time
Storage Time
Fall Time
Switching Time Test Circuit
2SB884/2SD1194
Symbol
Conditions
V(BR)CBO V(BR)CEO
ton
IC=(–)5mA, IE=0 IC=(–)50mA, RBE=∞ See specified Test Circuit
tstg See specified Test Circuit
tf See specified Test Circuit
Electrical Connection
Ratings min typ (–)110 (–)100
(0.8) 0.7
(2.4) 5.0
(1.2) 1.2
max
Unit
V V µs µs µs µs µs µs
No.1018–2/4
2SB884/2SD1194
No.1018–3/4
2SB884/2SD1194
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in .