Ordering number:723H
PNP/NPN Epitaxial Planar Silicon Transistors
2SB826/2SD1062
50V/12A Switching Applications
Applic...
Ordering number:723H
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SB826/2SD1062
50V/12A Switching Applications
Applications
· Relay drivers, high-speed inverters, converters, and other general high-current switching applications.
Features
· Low-saturation collector-to-emitter voltage : VCE(sat)=–0.5V (
PNP), 0.4V (
NPN) max.
· Wide ASO leading to high resistance to breakdown.
Package Dimensions
unit:mm 2010C
[2SB826/2SD1062]
( ) : 2SB826
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product
ICBO IEBO hFE1 hFE2
fT
VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)2V, IC=(–)5A VCE=(–)5V, IC=(–)1A
* : The 2SB826/2SD1062 are classified by 1A hFE as follows :
70 Q 140 100 R 200 140 S 280
1 : Base 2 : Collector 3 : Emitter
JEDEC : TO-220AB EIAJ : SC46
Ratings (–)60 (–)50 (–)6 (–)12 (–)15 40 150
–55 to +150
Unit V V V A A W ˚C ˚C
Ratings min typ
70* 30
10
max (–)0.1 (–)0.1 280*
Unit mA mA
MHz
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliab...
