Ordering number:677D
PNP/NPN Epitaxial Planar Silicon Transistors
2SB816/2SD1046
For LF Power Amplifier, 50W Output Lar...
Ordering number:677D
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SB816/2SD1046
For LF Power Amplifier, 50W Output Large Power Switching Applications
Features
· Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3).
· Wide ASO because of built-in ballast resistance. · Goode dependence of fT on current and good HF
characteristic.
Package Dimensions
unit:mm 2022A
[2SB816/2SD1046]
( ) : 2SB816
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product Output Capacitance
Symbol
Conditions
ICBO IEBO hFE1 hFE2
fT Cob
VCB=(–)80V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)1A VCE=(–)5V, IC=(–)5A
VCE=(–)5V, IC=(–)1A VCB=(–)10V, f=1MHz
* : The 2SB816/2SD1046 are classified by 1A hFE as follows :
60 D 120 100 E 200
1 : Base 2 : Collector 3 : Emitter
SANYO : TO-3PB
Ratings (–)150 (–)120 (–)6 (–)8 (–)12 80 150
–40 to +150
Unit V V V A A W ˚C ˚C
Ratings min typ
60* 20
15 (220)
160
max (–)0.1 (–)0.1 200*
Unit mA mA
MHz pF pF
Any and all SANYO products described or contained herein do not have specifications that can handle applicati...
