B776

Ordering number:678F 2SB776 : PNP Epitaxial Planar Silicon Transistor 2SD896 : NPN Triple Diffused Planar Silicon Transistor 2SB776/2SD896 100V/7A, AF 40W Output Applications Features · Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). · Wide ASO because of on-chip ballast resistance. · Goode dependence of fT on current and excellent high frequency responce. Package Dimensions unit:mm 2022A [2SB776/2SD896] The descriptions in parentheses are for the 2SB776 only ; other descriptions than those in parentheses are common to the 2SB776 and 2SD896. 1 : Base 2 : Collector 3 ; Emitter Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C Conditions Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance ICBO IEBO hFE1 hFE2 fT Cob VCB=(–)80V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)1A VCE=(–)5V, IC=(–)4A VCE=(–)5V, IC=(–)1A VCB=(–)10V, f=1MHz Base-to-Emitter Voltage VBE VCE=(–)5V, IC=(–)1A * : The 2SB776/2SD896 are classified by 1A hFE as follows : 60 D 120 100 E 200 SANYO : TO-3PB Ratings (–)120 (–)100 (–)6 (–)7 (–)11 70 150 –55 to +150 Unit...