Ordering number:513H
PNP/NPN Epitaxial Planar Silicon Transistor
2SB633/2SD613
85V/6A, AF 25 to 35W Output Applications...
Ordering number:513H
PNP/
NPN Epitaxial Planar Silicon
Transistor
2SB633/2SD613
85V/6A, AF 25 to 35W Output Applications
Features
· High breakdown voltage, VCEO85V, high current 6A. · AF25 to 35W output.
Package Dimensions
unit:mm 2010C
[2SB633/2SD613]
( ) : 2SB633
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Voltage Output Capacitance
ICBO IEBO hFE1 hFE2
fT VCE(sat)
VBE Cob
VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)1A VCE=(–)5V, IC=(–)3A VCE=(–)5V, IC=(–)1A IC=(–)4A, IB=(–)0.4A IE=(–)5A, IC=(–)1A VCB=(–)10V, f=1MHz
JEDEC : TO-220AB EIAJ : SC-46
1 : Base 2 : Collector 3 : Emitter
Ratings (–)100 (–)85 (–)6 (–)6 (–)10 40 150
–55 to +150
Unit V V V A A W ˚C ˚C
Ratings min typ
40* 20
15
(150) 110
max (–)0.1 (–)0.1 320*
(–)2.0 (–)1.5
Unit mA mA
MHz V V pF pF
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other...