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B1118 Dataheets PDF



Part Number B1118
Manufacturers Sanyo
Logo Sanyo
Description 2SB1118
Datasheet B1118 DatasheetB1118 Datasheet (PDF)

Ordering number:1784B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1118/2SD1618 Low-Voltage High-Current Amplifier, Muting Applications Features · Low collector-to-emitter saturation voltage. · Very small size making it easy to provide high- density, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1118/2SD1618] ( ) : 2SB1118 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collecto.

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Ordering number:1784B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1118/2SD1618 Low-Voltage High-Current Amplifier, Muting Applications Features · Low collector-to-emitter saturation voltage. · Very small size making it easy to provide high- density, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1118/2SD1618] ( ) : 2SB1118 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Mounted on ceramic board (250mm2×0.8mm) Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product ICBO IEBO hFE1 hFE2 fT VCB=(–)15V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)50mA VCE=(–)2V, IC=(–)500mA VCE=(–)10V, IC=(–)50mA * ; The 2SB1118/2SD1618 are classified by 50mA hFE as follows : 140 S 280 200 T 400 280 U 560 Marking 2SB1118 : BA 2SD1618 : DA hFE rank : S, T, U E : Emitter C : Collector B : Base SANYO : PCP (Bottom view) Ratings (–)20 (–)15 (–)5 (–)0.7 (–)1.5 500 1.3 150 –55 to +150 Unit V V V A A mW W ˚C ˚C Ratings min typ 140* 60 250 max (–)0.1 (–)0.1 560* Unit µA µA MHz Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 92098HA (KT)/4017KI/0216AT/2065MY, TS No.1784–1/3 Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Output Capacitance 2SB1118/2SD1618 Symbol Conditions VCE(sat)1 IC=(–)5mA, IB=(–)0.5mA VCE(sat)2 IC=(–)100mA, IB=(–)10mA VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Cob IC=(–)100mA, IB=(–)10mA IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)10µA, IC=0 VCB=(–)10V, f=1MHz Ratings min typ 10 (–15) 30 (–60) (–)0.8 (–)20 (–)15 (–)5 8 (13) max 25 (–35) 80 (–120) (–)1.2 Unit mV mV mV mV V V V V pF pF No.1784–2/3 2SB1118/2SD1618 Specifications of any and all SANYO products described or .



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