Document
Ordering number:1784B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1118/2SD1618
Low-Voltage High-Current Amplifier, Muting Applications
Features
· Low collector-to-emitter saturation voltage. · Very small size making it easy to provide high-
density, small-sized hybrid IC’s.
Package Dimensions
unit:mm 2038
[2SB1118/2SD1618]
( ) : 2SB1118
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Conditions Mounted on ceramic board (250mm2×0.8mm)
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product
ICBO IEBO hFE1 hFE2
fT
VCB=(–)15V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)50mA VCE=(–)2V, IC=(–)500mA VCE=(–)10V, IC=(–)50mA
* ; The 2SB1118/2SD1618 are classified by 50mA hFE as follows :
140 S 280 200 T 400 280 U 560
Marking 2SB1118 : BA 2SD1618 : DA
hFE rank : S, T, U
E : Emitter C : Collector B : Base
SANYO : PCP (Bottom view)
Ratings (–)20 (–)15 (–)5 (–)0.7 (–)1.5 500 1.3 150
–55 to +150
Unit V V V A A
mW W ˚C ˚C
Ratings min typ
140* 60
250
max (–)0.1 (–)0.1 560*
Unit µA µA
MHz
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/4017KI/0216AT/2065MY, TS No.1784–1/3
Parameter Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Output Capacitance
2SB1118/2SD1618
Symbol
Conditions
VCE(sat)1 IC=(–)5mA, IB=(–)0.5mA
VCE(sat)2 IC=(–)100mA, IB=(–)10mA
VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO
Cob
IC=(–)100mA, IB=(–)10mA IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)10µA, IC=0 VCB=(–)10V, f=1MHz
Ratings min typ
10 (–15)
30 (–60) (–)0.8 (–)20 (–)15 (–)5
8 (13)
max 25
(–35) 80
(–120) (–)1.2
Unit
mV mV mV mV V V V V pF pF
No.1784–2/3
2SB1118/2SD1618
Specifications of any and all SANYO products described or .
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