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B1168 Dataheets PDF



Part Number B1168
Manufacturers Sanyo
Logo Sanyo
Description 2SB1168
Datasheet B1168 DatasheetB1168 Datasheet (PDF)

Ordering number:ENN2048B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1168/2SD1725 Large Current Switching Applications Features · Relay drivers, high-speed inverters, converters. Features · Low collector-to-emitter saturation voltage. · High fT. · Excellent linearity of hFE. · Short switching time. Package Dimensions unit:mm 2043B [2SB1168/2SD1725] 8.0 4.0 2.0 2.7 1.5 9.0 11.0 1.6 0.8 3.0 15.5 0.8 0.6 0.5 Specifications ( ) : 2SB1168 Absolute Maximum Ratings at Ta = 25˚C Para.

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Ordering number:ENN2048B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1168/2SD1725 Large Current Switching Applications Features · Relay drivers, high-speed inverters, converters. Features · Low collector-to-emitter saturation voltage. · High fT. · Excellent linearity of hFE. · Short switching time. Package Dimensions unit:mm 2043B [2SB1168/2SD1725] 8.0 4.0 2.0 2.7 1.5 9.0 11.0 1.6 0.8 3.0 15.5 0.8 0.6 0.5 Specifications ( ) : 2SB1168 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C 12 3 2.4 4.8 Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain ICBO IEBO hFE1 hFE2 VCB=(–)100V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)0.5A VCE=(–)5V, IC=(–)3A Gain-Bandwidth Product fT VCE=(–)10V, IC=(–)0.5A * : The 2SB1168/2SD1725 are classified by 0.5A hFE as follows : Rank Q R S T hFE 70 to 140 100 to 200 140 to 280 200 to 400 1.2 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126LP Ratings (–)120 (–)100 (–)6 (–)4 (–)8 1.2 20 150 –55 to +150 Unit V V V A A W W ˚C ˚C Ratings min typ max Unit (–)1 µA (–)1 µA 70* 400* 40 (130) MHz 180 MHz Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 20701TS TA-3150, 3153/92098HA (KT)/4137KI/D176TA, TS No.2048–1/5 2SB1168/2SD1725 Continued from preceding page. Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol Conditions Cob VCB=(–)10V, f=1MHz VCE(sat) IC=(–)2A, IB=(–)0.2A VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO IC=(–)2A, IB=(–)0.2A IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)10µA, IC=0 ton See specified Test Circuit tstg tf Switching Time Test Circuit PW=20µs D.C.≤1% IB1 IB2 IN.


D1725 B1168 B1015A


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