Document
Ordering number:ENN2048B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1168/2SD1725
Large Current Switching Applications
Features
· Relay drivers, high-speed inverters, converters.
Features
· Low collector-to-emitter saturation voltage. · High fT. · Excellent linearity of hFE. · Short switching time.
Package Dimensions
unit:mm
2043B
[2SB1168/2SD1725]
8.0 4.0
2.0
2.7
1.5 9.0 11.0
1.6 0.8
3.0 15.5
0.8 0.6 0.5
Specifications
( ) : 2SB1168 Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Symbol
VCBO VCEO VEBO
IC ICP
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
12 3 2.4
4.8
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain
ICBO IEBO hFE1 hFE2
VCB=(–)100V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)0.5A VCE=(–)5V, IC=(–)3A
Gain-Bandwidth Product
fT VCE=(–)10V, IC=(–)0.5A
* : The 2SB1168/2SD1725 are classified by 0.5A hFE as follows :
Rank
Q
R
S
T
hFE 70 to 140 100 to 200 140 to 280 200 to 400
1.2
1 : Emitter 2 : Collector 3 : Base SANYO : TO-126LP
Ratings (–)120 (–)100 (–)6 (–)4 (–)8 1.2 20 150
–55 to +150
Unit V V V A A W W ˚C ˚C
Ratings min typ max
Unit
(–)1 µA
(–)1 µA
70* 400*
40
(130)
MHz
180 MHz
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
20701TS TA-3150, 3153/92098HA (KT)/4137KI/D176TA, TS No.2048–1/5
2SB1168/2SD1725
Continued from preceding page.
Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time
Storage Time Fall Time
Symbol
Conditions
Cob VCB=(–)10V, f=1MHz
VCE(sat) IC=(–)2A, IB=(–)0.2A
VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO
IC=(–)2A, IB=(–)0.2A IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)10µA, IC=0
ton
See specified Test Circuit tstg
tf
Switching Time Test Circuit
PW=20µs D.C.≤1%
IB1 IB2
IN.