IPB65R660CFDA

MOSFET MetalOxideSemiconductorFieldEffectTransistor CFDAAutomotive 650VCoolMOS™CFDAPowerTransistor IPx65R660CFDA DataSheet Rev.2.1 Final Automotive 650VCoolMOS™CFDAPowerTransistor IPB65R660CFDA,IPP65R660CFDA 1Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.650VCoolMOS™CFDAseries combinestheexperienceoftheleadingSJMOSFETsupplierwithhigh classinnovation.Theresultingdevicesprovideallbenefitsofafast switchingSJMOSFETwhileofferinganextremelyfastandrobustbody diode.Thiscombinationofextremelylowswitching,commutationand conductionlossestogetherwithhighestrobustnessmakeespecially resonantswitchingapplicationsmorereliable,moreefficient,lighter,and cooler. Features Ultra-fastbodydiode Veryhighcommutationruggedness ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Easytouse/drive QualifiedaccordingtoAECQ101 Greenpackage(RoHScompliant),Pb-freeplating,halogenfreeformold compound Applications 650VCoolMOS™CFDAisdesignedforswitchingapplications. D²PAK tab 2 1 3 TO-220 tab Gate Pin 1 Drain Pin 2 Source Pin 3 Table1KeyPerformanceParameters Parameter Value Unit VDS RDS(on),max 650 0.66 V Ω Qg,typ 20 nC ID,pulse 17 A Eoss @ 400V 1.8 µJ Body diode di/dt 900 A/µs Qrr 0.2 µC trr 65 ns Irrm 4.5 A Type/Orderi...