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IPD068P03L3G

Infineon Technologies
Part Number IPD068P03L3G
Manufacturer Infineon Technologies
Description Power-Transistor
Published May 30, 2015
Detailed Description OptiMOSTM P3 Power-Transistor Features • single P-Channel in DPAK • Qualified according JEDEC1) for target applications ...
Datasheet PDF File IPD068P03L3G PDF File

IPD068P03L3G
IPD068P03L3G

Overview
OptiMOSTM P3 Power-Transistor Features • single P-Channel in DPAK • Qualified according JEDEC1) for target applications • 175 °C operating temperature • 100% Avalanche tested • Pb-free; RoHS compliant, halogen free • applications: power management • Halogen-free according to IEC61249-2-21 IPD068P03L3 G Product Summary VDS RDS(on),max IDD VGS = 10V VGS = 4.
5V -30 V 6.
8 mW 11.
0 -70 A PG-TO252-3 Type IPD068P03L3 G Package Marking PG-TO252-3 068P03L Lead free Yes Packing non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Ope...


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