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FDMQ86530L Dataheets PDF



Part Number FDMQ86530L
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel PowerTrench MOSFET
Datasheet FDMQ86530L DatasheetFDMQ86530L Datasheet (PDF)

FDMQ86530L Quad N-Channel PowerTrench® MOSFET April 2013 FDMQ86530L GreenBridgeTM Series of High-Efficiency Bridge Rectifiers N-Channel PowerTrench® MOSFET 60 V, 8 A, 17.5 mΩ Features General Description „ Max rDS(on) = 17.5 mΩ at VGS = 10 V, ID = 8 A „ Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A „ Max rDS(on) = 25 mΩ at VGS = 4.5 V, ID = 6.5 A „ Substantial efficiency benefit in PD solutions This Quad MOSFET solution provides ten-fold improvement in power dissipation over diode bridge. Ap.

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FDMQ86530L Quad N-Channel PowerTrench® MOSFET April 2013 FDMQ86530L GreenBridgeTM Series of High-Efficiency Bridge Rectifiers N-Channel PowerTrench® MOSFET 60 V, 8 A, 17.5 mΩ Features General Description „ Max rDS(on) = 17.5 mΩ at VGS = 10 V, ID = 8 A „ Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A „ Max rDS(on) = 25 mΩ at VGS = 4.5 V, ID = 6.5 A „ Substantial efficiency benefit in PD solutions This Quad MOSFET solution provides ten-fold improvement in power dissipation over diode bridge. Applications „ RoHS Compliant „ Active bridge „ Diode Bridge replacement in 24V & 48V AC systems Top Bottom G4 D1/D4 D3/S4 G3 S3 S3 D1/D4 D3/ S1/ S4 D2 Pin 1 G1 D1/D4 S1/D2 G2 S2 S2 G1 D1/D4 S1/D2 G2 S2 MLP 4.5x5 S2 Q1 Q4 Q2 Q3 G4 D1/D4 D3/S4 G3 S3 S3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) Ratings 60 ±20 8 8 50 22 1.9 -55 to +150 Units V V A W °C RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) (Note 1b) 65 135 °C/W Device Marking FDMQ86530L Device FDMQ86530L Package MLP 4.5x5 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2012 Fairchild Semiconductor Corporation FDMQ86530L Rev. C1 1 www.fairchildsemi.com FDMQ86530L Quad N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 μA, VGS = 0 V ID = 250 μA, referenced to 25 °C VDS = 48 V, VGS = 0 V VGS = ±20 V, VDS = 0 V On Characteristics VGS(th) ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance VGS = VDS, ID = 250 μA ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 8 A VGS = 6 V, ID = 7 A VGS = 4.5 V, ID = 6.5 A VGS = 10 V, ID = 8 A, TJ = 125 °C VDS = 5 V, ID = 8 A Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 30 V, VGS = 0 V, f = 1 MHz Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge VDD = 30 V, ID = 8 A, VGS = 10 V, RGEN = 6 Ω VGS = 0 V to 10 V VGS = 0 V to 4.5 V VDD = 30 V, ID = 8 A Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 8 A VGS = 0 V, IS = 1.6 A (Note 2) (Note 2) IF = 8 A, di/dt = 100 A/μs Min 60 1 Typ 27 1.8 -6 12 15 20 18 28 1725 299 10 8.8 3.8 22 2.8 23 11 5.1 2.3 0.8 0.7 27 12 Max Units 1 ±100 V mV/°C μA nA 3V mV/°C 17.5 23 mΩ 25 26 S 2295 400 15 pF pF pF 18 ns 10 ns 35 ns 10 ns 33 nC 16 nC nC nC 1.3 V 1.2 43 ns 22 nC Notes: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 65 °C/W when mounted on a 1 in2 pad of 2 oz copper. the board designed Q1+Q3 or Q2+Q4. b. 135 °C/W when mounted on a minimum pad of 2 oz copper. the board designed Q1+Q3 or Q2+Q4. SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ©2012 Fairchild Semiconductor Corporation FDMQ86530L Rev. C1 2 www.fairchildsemi.com FDMQ86530L Quad N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted ID, DRAIN CURRENT (A) 50 VGS = 10 V 40 VGS = 6 V VGS = 5 V 30 VGS = 4.5 V VGS = 4 V 20 VGS = 3.5 V 10 0 0.0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 5 VGS = 3.5 V 4 VGS = 4 V 3 VGS = 4.5 V 2 VGS = 5 V 1 VGS = 6 V VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 10 20 30 40 50 ID, DRAIN CURRENT (A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.8 1.6 ID = 8 A VGS = 10 V 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 50 PULSE DURATION = 80 μs ID = 8 A DUTY CYCLE = 0.5% MAX 40 30 TJ = 125 oC 20 10 TJ = 25 oC 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure .


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