Document
FDMQ86530L Quad N-Channel PowerTrench® MOSFET
April 2013
FDMQ86530L
GreenBridgeTM Series of High-Efficiency Bridge Rectifiers N-Channel PowerTrench® MOSFET
60 V, 8 A, 17.5 mΩ
Features
General Description
Max rDS(on) = 17.5 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A Max rDS(on) = 25 mΩ at VGS = 4.5 V, ID = 6.5 A Substantial efficiency benefit in PD solutions
This Quad MOSFET solution provides ten-fold improvement in power dissipation over diode bridge.
Applications
RoHS Compliant
Active bridge
Diode Bridge replacement in 24V & 48V AC systems
Top Bottom
G4 D1/D4 D3/S4
G3 S3 S3
D1/D4
D3/ S1/ S4 D2
Pin 1 G1 D1/D4 S1/D2 G2 S2 S2
G1 D1/D4 S1/D2
G2 S2
MLP 4.5x5
S2
Q1 Q4 Q2 Q3
G4 D1/D4 D3/S4 G3 S3 S3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous -Continuous -Pulsed
TC = 25 °C TA = 25 °C
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a) (Note 1a)
Ratings 60 ±20 8 8 50 22 1.9
-55 to +150
Units V V
A
W °C
RθJA RθJA
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a) (Note 1b)
65 135
°C/W
Device Marking FDMQ86530L
Device FDMQ86530L
Package MLP 4.5x5
Reel Size 13 ’’
Tape Width 12 mm
Quantity 3000 units
©2012 Fairchild Semiconductor Corporation FDMQ86530L Rev. C1
1
www.fairchildsemi.com
FDMQ86530L Quad N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 48 V, VGS = 0 V VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
ΔVGS(th) ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 8 A VGS = 6 V, ID = 7 A VGS = 4.5 V, ID = 6.5 A VGS = 10 V, ID = 8 A, TJ = 125 °C VDS = 5 V, ID = 8 A
Dynamic Characteristics
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
VDS = 30 V, VGS = 0 V, f = 1 MHz
Switching Characteristics
td(on) tr td(off) tf Qg Qg Qgs Qgd
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge
VDD = 30 V, ID = 8 A, VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V VGS = 0 V to 4.5 V VDD = 30 V,
ID = 8 A
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge
VGS = 0 V, IS = 8 A VGS = 0 V, IS = 1.6 A
(Note 2) (Note 2)
IF = 8 A, di/dt = 100 A/μs
Min 60
1
Typ
27
1.8 -6 12 15 20 18 28
1725 299 10
8.8 3.8 22 2.8 23 11 5.1 2.3
0.8 0.7 27 12
Max Units
1 ±100
V
mV/°C μA nA
3V
mV/°C
17.5 23
mΩ 25 26
S
2295 400 15
pF pF pF
18 ns 10 ns 35 ns 10 ns 33 nC 16 nC
nC nC
1.3 V
1.2 43 ns 22 nC
Notes: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 65 °C/W when mounted on a 1 in2 pad of 2 oz copper. the board designed Q1+Q3 or Q2+Q4.
b. 135 °C/W when mounted on a minimum pad of 2 oz copper. the board designed Q1+Q3 or Q2+Q4.
SS SF DS DF G
SS SF DS DF G
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
©2012 Fairchild Semiconductor Corporation FDMQ86530L Rev. C1
2
www.fairchildsemi.com
FDMQ86530L Quad N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
ID, DRAIN CURRENT (A)
50 VGS = 10 V
40 VGS = 6 V VGS = 5 V
30
VGS = 4.5 V VGS = 4 V
20 VGS = 3.5 V
10 0 0.0
PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX
0.5 1.0 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
5
VGS = 3.5 V 4
VGS = 4 V
3 VGS = 4.5 V
2 VGS = 5 V
1
VGS = 6 V VGS = 10 V
PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX
0
0 10 20 30 40 50
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
1.8
1.6
ID = 8 A VGS = 10 V
1.4
1.2
1.0
0.8
0.6 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance vs Junction Temperature
rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ)
50 PULSE DURATION = 80 μs
ID = 8 A DUTY CYCLE = 0.5% MAX 40
30
TJ = 125 oC 20
10 TJ = 25 oC
0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)
Figure .