BSL214N

OptiMOS™2 Small-Signal-Transistor Features Dual N-channel Enhancement mode Super Logic level (2.5V rated) Avalanche rated Qualified according to AEC Q101 100% lead-free; RoHS compliant Halogen free according to IEC61249-2-21 BSL214N Product Summary VDS RDS(on),max ID VGS=4.5 V VGS=2.5 V 20 V 140 mW 250 1.5 A PG-TSOP6 65 4 1 2 3 Type BSL214N Package TSOP6 Tape and Reel Information H6327: 3000 pcs/ reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter 1) Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=70 °C T A=25 °C Marking sPM Avalanche energy, single pulse E AS I D=1.5A, R GS=25 W Reverse diode dv /dt dv /dt I D=1.5 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage V GS Power dissipation P tot T A=25 °C Operating and storage temperature T j, T stg ESD Class JESD22-A114 -HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 1) Remark: one of both transistors in operation Lead Free Yes Packing Non dry Value 1.5 1.2 6 3.7 6 ±12 0.5 -55 ... 150 0 (<250V) 260 °C 55/150/56 Unit A mJ kV/µs V W °C Rev 2.3 page 1 2013-11-06 Parameter Thermal characteristics Thermal resistance, junction - ambient Symbol Conditions BSL214N min. Values typ. Unit max. R thJA minimal footprint 2) - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS= 0 V, I D= 250...