OptiMOS™-T2 Power-Transistor
Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to ...
OptiMOS™-T2 Power-
Transistor
Features Dual N-channel Logic Level - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested
IPG20N10S4L-22
Product Summary VDS RDS(on),max4) ID
100 V 22 mΩ 20 A
PG-TDSON-8-4
Type IPG20N10S4L-22
Package
Marking
PG-TDSON-8-4 4N10L22
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current one channel active1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2) one channel active
I D,pulse -
Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source voltage
E AS I AS V GS
I D=10A -
Power dissipation one channel active
P tot T C=25°C
Operating and storage temperature T j, T stg -
Value
20
20
80 130 15 ±16 60 -55 ... +175
Unit A
mJ A V W °C
Rev. 1.1
page 1
2013-01-30
IPG20N10S4L-22
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case SMD version, device on PCB
R thJC R thJA
minimal footprint 6cm2 cooling area3)
min.
Values typ.
Unit max.
- - 2.5 K/W - 100 - 60 -
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage Gate threshold voltage
Zero gate voltage drain current4)
V (BR)DSS V GS=0V, I D= 1mA V GS(th) V DS=V GS, I D= 25µA
I DSS
V DS=100V, V GS=0V, T j=25°C
100 1.1
-
1.6
0.01
-V 2.1
1 µA
Gate-source l...
