MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOS™Small-Signal-Transistor,100V
BSL296SN
DataSheet
Rev....
MOSFET
MetalOxideSemiconductorFieldEffect
Transistor
OptiMOS™Small-Signal-
Transistor,100V
BSL296SN
DataSheet
Rev.2.0 Final
Industrial&Multimarket
OptiMOS™ Small-Signal-
Transistor
Features N-channel Enhancement mode Logic level (4.5V rated) Avalanche rated Qualified according to AEC Q101 RoHS compliant Halogen-free according to IEC61249-2-21
BSL296SN
Product Summary
VDS RDS(on),max
ID
VGS=10 V VGS=4.5 V
100 V 460 mΩ 560 1.4 A
PG-TSOP6
65
4
1 23
Type BSL296SN
Package TSOP6
Tape and Reel Info H6327: 3000 pcs/ reel
Marking sLZ
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt
ID
I D,pulse E AS dv /dt
T A=25 °C
T A=70 °C
T A=25 °C
I D=1.4 A, R GS=25 Ω
I D=1.4 A, V DS=50 V, di /dt =200 A/µs, T j,max=150 °C
Gate source voltage Power dissipation1) Operating and storage temperature ESD Class
V GS P tot T A=25 °C T j, T stg
JESD22-A114 -HBM
Soldering Temperature
IEC climatic category; DIN IEC 68-1
Halogen Free Yes
Packing Non dry
Value 1.4 1.1 5.6 15.0
6
±20 2.0 -55 ... 150 0 (<250V) 260 °C 55/150/56
Unit A
mJ kV/µs V W °C
Rev 2.0
page 1
2014-10-16
Parameter Thermal characteristics
Symbol Conditions
BSL296SN
min.
Values typ.
Unit max.
Thermal resistance, junction - soldering point Thermal resistance
junction - ambient
R thJS
R thJA
minimal footprint 6 cm2 cooling area1)
-
-
- 50 K/W
- 230 ...