K1310A

2SK1310A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1310A RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER z Output Power : Po ≥ 190 W (Min.) z Drain Efficiency : ηD = 65% (Typ.) z Frequency : f = 230 MHz z Push−Pull Structure Package Unit in mm ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage Gate-Source Voltage Drain Current Reverse Drain Current Drain Power Dissipation Channel Temperature Storage Temperature Range VDSS VGSS ID IDR PD Tch Tstg 100 ±20 12 12 250 150 −55~150 V V A A W °C °C Note: Using continuously under heavy loads (e.g. the application of high JEDEC — temperature/current/voltage and the significant change in EIAJ — temperature, etc.) may cause this product to decrease in the TOSHIBA 2−22C2A reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum Weight: 17.5 g ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-11-01 ELECTRICAL CHARACTERISTICS (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Output Power Drain Efficiency Drain-Source Breakdown Voltage Drain Cut-off Current Gate Threshold Voltage Drain-Source ON Resistance Drain-Source ON Voltage Forward Tra...