2SK1426
Ordering number:EN3564A
Features
· Low ON-state resistance. · Ultrahigh-speed switching. · Converters.
N-Channel Silico...
Description
Ordering number:EN3564A
Features
· Low ON-state resistance. · Ultrahigh-speed switching. · Converters.
N-Channel Silicon MOSFET
2SK1426
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm 2077A
[2SK1426]
20.0 3.3
5.0
26.0 6.0
2.0 1.0
20.7
2.0 3.4
1.2
1 23
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
5.45
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS ID=1mA, VGS=0
Zero-Gate Voltage Drain Current
IDSS VDS=60V, VGS=0
Gate-to-Source Leakage Current
IGSS VGS=±20V, VDS=0
Cutoff Voltage
VGS(off) VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs | VDS=10V, ID=60A
Static Drain-to-Source ON-State Resistance
RDS(on) ID=60A, VGS=10V
(Note) Be careful in handling the 2SK1426 because it has no protection diode between gate and source.
5.45
2.8
0.6
1 : Gate 2 : Drain 3 : Source SANYO : TO-3PBL
Ratings 60
±20 100 400 200 3.5 150 –55 to +150
Unit V V A A W W ˚C ˚C
Ratings min typ max
Unit
60 V
100 µA
±100 nA
1.5 2.5 V
40 70
S
0.008 0.012 Ω
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliabil...
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