K1530

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 2SK1530 High-Power Amplifier Application High breakdown voltage High forward transfer admittance Complementary to 2SJ201 : VDSS = 200V : |Yfs| = 5.0 S (typ.) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Gate−source voltage Drain current (Note 1) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range Symbol VDSS VGSS ID PD Tc Tstg Rating 200 ±20 12 150 150 −55~150 Marking Unit V V A W °C °C TOSHIBA 2SK1530 JAPAN Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-21F1B Weight: 9.75 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Drain cut−off current Gate leakage current Drain−source breakdown voltage Drain−source saturation voltage Gate−source cut−off voltage (Note 2) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance IDSS IGSS V (BR) DSS VDS (ON) VGS (OFF) |Yfs| Ciss Coss Crss VDS = 200 V, VGS = 0 VDS = 0V, VGS = ±20 V ID = 10 mA, VGS = 0 ID = 8 A, VGS = 10 V VDS = 10 V, ID = 0.1 A VDS = 10 V, ID = 5 A VDS = 30 V, VGS = 0, f = 1 MHz VDS = 30 V, VGS = 0, f = 1 MHz VDD = 30 V, VGS = 0, f = 1 MHz Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VGS (OFF) Classification 0: 0.8~1.6 This transistor is an electrostatic-sensitive device. Ple...