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K1826

Toshiba
Part Number K1826
Manufacturer Toshiba
Description 2SK1826
Published May 29, 2015
Detailed Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1826 High Speed Switching Applications Analog Switch Appli...
Datasheet PDF File K1826 PDF File

K1826
K1826

Overview
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1826 High Speed Switching Applications Analog Switch Applications · 4 V gate drive · Low threshold voltage: Vth = 0.
8~2.
5 V · High speed · Enhancement-mode · Small package Marking Equivalent Circuit 2SK1826 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range VDS VGSS ID PD Tch Tstg 50 10 50 200 150 -55~150 Note: This transistor is electrostatic sensitive device.
Please handle with caution.
Unit V V mA mW °C °C JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1F Weight: 0.
012 g (t...


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