K1729

Ordering number:EN3824 Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. N-Channel Silicon MOSFET 2SK1729 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2087A [2SK1729] 2.5 1.45 6.9 1.0 4.0 1.0 4.5 1.0 0.9 1 Specifications 2.54 Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) RDS(on) ID=1mA, VGS=0 VDS=100V, VGS=0 VGS=±12V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=250mA ID=250mA, VGS=10V ID=250mA, VGS=4V 1.0 0.6 0.5 23 2.54 0.45 1 : Source 2 : Drain 3 : Gate SANYO : NMP Ratings 100 ±15 0.5 2 1 150 –55 to +150 Unit V V A A W ˚C ˚C Ratings min typ max Unit 100 V 100 µA ±10 µA 1.0 2.0 V 400 700 mS 2.7 3.5 Ω 3.2 4.2 Ω Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other...