K1735

Ordering number:EN3830 N-Channel Silicon MOSFET 2SK1735 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. Package Dimensions unit:mm 2085A [2SK1735] 4.5 10.5 1.9 1.2 2.6 1.4 1.0 8.5 1.2 1.6 0.5 123 Specifications 2.5 Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Symbol Conditions V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) | yfs | RDS(on) RDS(on) ID=1mA, VGS=0 IG=±100µA, VDS=0 VDS=60V, VGS=0 VGS=±12V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=2A ID=2A, VGS=10V ID=2A, VGS=4V 2.5 7.5 0.5 1 : Source 2 : Drain 3 : Gate SANYO : FLP Ratings 60 ±15 4 16 1.5 150 –55 to +150 Unit V V A A W ˚C ˚C Ratings min typ max Unit 60 V ±15 V 100 µA ±10 µA 1.0 2.0 V 3.5 5.5 S 70 90 mΩ 90 120 mΩ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels o...