SCT2160KE

SCT2160KE N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID PD 1200V 160m 22A 165W Features 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant Application Solar inverters DC/DC converters Switch mode power supplies Induction heating Motor drives Outline TO-247 Inner circuit (1) (2) (3) (2) (1) Gate (2) Drain *1 (3) Source (1) *1 Body Diode (3) Packaging specifications Packaging Tube Reel size (mm) - Tape width (mm) Type Basic ordering unit (pcs) 30 Packing code C Marking SCT2160KE Absolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Tc = 25°C Tc = 100°C Pulsed drain current Gate - Source voltage (DC) Gate - Source surge voltage (Tsurge ˂ 300nsec) Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature Symbol VDSS ID *1 ID *1 ID,pulse *2 VGSS VGSS-surge*3 PD Tj Tstg Value 1200 22 16 55 6 to 22 10 to 26 165 175 55 to 175 Unit V A A A V V W °C °C www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 1/12 2017.07 - Rev.D SCT2160KE Thermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s Datasheet Symbol RthJC RthJA Tsold Values Min. Typ. Max. Unit - 0.70 0.91 °C/W - - 50 °C/W - - 265 °C Electrical characteristics (Ta = 25°C) Parameter Symbol Condit...