DatasheetsPDF.com

IPB180P04P4L-02 Dataheets PDF



Part Number IPB180P04P4L-02
Manufacturers Infineon
Logo Infineon
Description Power-Transistor
Datasheet IPB180P04P4L-02 DatasheetIPB180P04P4L-02 Datasheet (PDF)

Final Data Sheet IPB180P04P4L-02 OptiMOS®-P2 Power-Transistor Product Summary V DS R DS(on),max ID -40 V 2.4 mW -180 A Features • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Intended for reverse battery protection Type IPB180P04P4L-02 Package PG-TO263-7-3 Marking 4QP04L02 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Condi.

  IPB180P04P4L-02   IPB180P04P4L-02


Document
Final Data Sheet IPB180P04P4L-02 OptiMOS®-P2 Power-Transistor Product Summary V DS R DS(on),max ID -40 V 2.4 mW -180 A Features • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Intended for reverse battery protection Type IPB180P04P4L-02 Package PG-TO263-7-3 Marking 4QP04L02 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25°C, V GS=-10V1) T C=100°C, V GS=-10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse E AS I D= -90A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - PG-TO263-7-3 Gate Pin 1 Drain Pin 4, Tab Source Pin 2, 3, 5, 6, 7 Value -180 -140 -720 84 -180 ±163) 150 -55 ... +175 55/175/56 Unit A mJ A V W °C Rev. 1.3 page 1 2011-04-27 Final Data Sheet IPB180P04P4L-02 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area4) min. Values typ. Unit max. - - 1 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= -1mA -40 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=-410µA -1.2 -1.7 -2.2 Zero gate voltage drain current I DSS V DS=-32V, V GS=0V, T j=25°C - -0.1 -1 µA Gate-source leakage current Drain-source on-state resistance V DS=-32V, V GS=0V, T j=125°C2) I GSS V GS=-16V, V DS=0V R DS(on) V GS=-4.5V, I D=-100A V GS=-10V, I D=-100A - - -20 -200 - -100 nA 2.6 3.9 mW 1.8 2.4 Rev. 1.3 page 2 2011-04-27 Final Data Sheet IPB180P04P4L-02 Parameter Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage Reverse recovery time2) Symbol Conditions min. Values typ. Unit max. C iss C oss Crss V GS=0V, V DS=-25V, f =1MHz - 14400 18700 pF - 4570 5900 - 180 360 t d(on) - 32 - ns t r V DD=-20V, - 28 - V GS=-10V, I D=-180A, t d(off) R G=3.5W - 146 - t f - 119 - Q gs Q gd Qg V plateau V DD=-32 V, I D=-180 A, V GS=0 to -10 V - 50 65 nC - 38 76 - 220 286 - -3.5 - V IS I S,pulse T C=25°C V SD V GS=0V, I F=-100A, T j=25°C t rr V R=-20V, I F=-50A, di F/dt =-100A/µs - - -180 A - - -720 - -1.0 -1.3 V - 71 - ns Reverse recovery charge2) Q rr - 101 - nC 1) Current is limited by bondwire; with an R thJC = 1K/W the chip is able to carry 200A at 25°C. 2) Specified by design. Not subject to production test. 3) VGS=+5V/-16V according AEC; VGS=+16V for max 168h at TJ=175°C 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.3 page 3 2011-04-27 Final Data Sheet IPB180P04P4L-02 1 Power dissipation P tot = f(T C); V GS ≤ -6V 2 Drain current I D = f(T C); V GS ≤ -6V P tot [W] -I D [A] 160 140 120 100 80 60 40 20 0 0 50 100 T C [°C] 3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0 parameter: t p 1000 200 190 180 170 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 150 200 0 50 100 150 T C [°C] 1 µs 10 µs 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 101 200 -I D [A] Z thJC [K/W] 100 10 1 0.1 Rev. 1.3 1 ms 100 µs 100 0.5 1 10 -V DS [V] 0.1 10-1 0.01 0.05 10-2 single pulse 10-3 100 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2011-04-27 Final Data Sheet IPB180P04P4L-02 -I D [A] R DS(on) [mW] 5 Typ. output characteristics I D = f(V DS); T j = 25°C parameter: V GS 700 -10 V -5 V 600 500 400 300 200 100 0 01234 -V DS [V] 7 Typ. transfer characteristics I D = f(V GS); V DS = -6V parameter: T j 700 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25°C parameter: V GS 20 -2.8 V 18 -3 V -3.5 V -4.5 V 16 14 12 -4 V 10 8 -3.5 V -3 V 56 6 4 2 0 0 -4 V -4.5 V -10 V 50 100 -I D [A] 150 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = -100A; V GS = -10V 3 600 2.5 500 -I D [A] R DS(on) [mW] 400 2 300 200 100 175 °C 25 °C -55 °C 0 0123456 -V GS [V] 1.5 1 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.3 page 5 2011-04-27 Final Data Sheet IPB180P04P4L-02 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 2.25 10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz -V GS(th) [V] C [pF] 2 1.75 1.5 1.25 1 -410µA -4100µA 104 103 102 Ciss Coss Crss 0.75 -60 -20 20 60 100 140 1.


IPP80P03P4L-07 IPB180P04P4L-02 IPD90N10S4L-06


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)