OptiMOS®-P2 Power-Transistor
Features • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C pe...
OptiMOS®-P2 Power-
Transistor
Features P-channel - Logic Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested Intended for reverse battery protection
IPD90P03P4L-04
Product Summary V DS R DS(on) ID
-30 V 4.1 mΩ -90 A
PG-TO252-3-11
Type IPD90P03P4L-04
Package
Marking
PG-TO252-3-11 4P03L04
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
ID
T C=25°C, V GS=-10V
T C=100°C, V GS=-10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse
E AS I D=-45A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Rev. 1.0
page 1
Value
-90
-90
-360 370 -90 +5/-16 137 -55 ... +175 55/175/56
Unit A
mJ A V W °C
2008-07-30
IPD90P03P4L-04
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case SMD version, device on PCB
R thJC R thJA
minimal footprint 6 cm2 cooling area3)
min.
Values typ.
Unit max.
- - 1.1 K/W - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= -1mA -30 -
...
