OptiMOS®-P2 Power-Transistor
Features • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C pe...
OptiMOS®-P2 Power-
Transistor
Features P-channel - Logic Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested
IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03
Product Summary V DS R DS(on) (SMD Version) ID
-40 V 3.1 mW -120 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type IPB120P04P4L-03 IPI120P04P4L-03 IPP120P04P4L-03
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Marking 4P04L03 4P04L03 4P04L03
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
ID
T C=25°C, V GS=-10V
T C=100°C, V GS=-10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse
E AS I D=-60A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Rev. 1.0
page 1
Value
-120
-114
-480 78 -120 ±163) 136 -55 ... +175 55/175/56
Unit A
mJ A V W °C
2011-02-10
IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03
Parameter
Symbol
Conditions
min.
Values typ.
Unit max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction ambient, leaded
R thJA
-
- - 1.1 K/W - - 62
SMD version, device on PCB
R thJA
minimal footprint 6 cm2 cooling area4)
-
- 62 - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
S...
