Transistor
Power transistor (60V, 3A)
2SC5824
2SC5824
!Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A)...
Transistor
Power
transistor (60V, 3A)
2SC5824
2SC5824
!Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A,
IB = 200mA) 3) Strong discharge power for inductive load and
capacitance load. 4) Complements the 2SA2071.
!External dimensions (Units : mm)
MPT3
4.0 1.0 2.5
(1)
0.5
3.0 1.5 0.4
0.5
(2)
(3)
1.6 1.5 4.5
1.5 0.4 0.4
!Applications
NPN Silicon epitaxial planar
transistor
(1)Base(Gate)
Each lead has same dimensions
(2)Collector(Drain)
(3)Emitter(Sourse) Abbreviated symbol : UP
!Structure Low frequency amplifier High speed switching
!Packaging specifications
Type 2SC5824
Package Code Basic ordering unit (pieces)
Taping T100 1000
!Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
Collector current
Symbol VCBO VCEO VEBO IC ICP
Power dissipation
PC PC
Junction temperature
Tj
Range of storage temperature
Tstg
∗1 Pw=100ms ∗2 Each terminal mounted on a recommended land. ∗3 Mounted on a 40x40x0.7(mm) ceramic substrate
Limits 60 60 6 3 6
500
2.0 150 −55~+150
Unit V V V A A ∗1
mW ∗2 W ∗3 °C °C
1/3
Transistor
2SC5824
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Collector−base breakdown voltage BVCBO
Collector−emitter breakdown voltage BVCEO
Emitter−base breakdown voltage BVEBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
Collector−emitter staturation voltage VCE(sat)
DC current...
