NCE N-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com
Pb Free Product
NCE60H10
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE60H10 ...
Description
http://www.ncepower.com
Pb Free Product
NCE60H10
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE60H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Feature
● VDS =60V,ID =100A RDS(ON) < 6.5mΩ @ VGS=10V
(Typ:5.7mΩ)
● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
Schematic diagram
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED! 100% ∆Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE60H10
NCE60H10
TO-220-3L
Reel Size -
Tape width -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
IDM
Limit
60 ±20 100 70 320
Quantity -
Unit
V V A A A
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
http://www.ncepower.com
Pb Free Product
NCE60H10
Maximum Power Dissipation Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range
PD
EAS
TJ,TSTG
170 1.13 550 -55 T...
Similar Datasheet