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NCE6075 Dataheets PDF



Part Number NCE6075
Manufacturers NCE Power
Logo NCE Power
Description NCE N-Channel Enhancement Mode Power MOSFET
Datasheet NCE6075 DatasheetNCE6075 Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCE6075 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6075 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =75A RDS(ON) < 11.5mΩ @ VGS=10V (Typ:9.1mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent pac.

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http://www.ncepower.com Pb Free Product NCE6075 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6075 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =75A RDS(ON) < 11.5mΩ @ VGS=10V (Typ:9.1mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package NCE6075 NCE6075 TO-220-3L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation IDM PD Derating factor Single pulse avalanche energy (Note 5) EAS Operating Junction and Storage Temperature Range TJ,TSTG Limit 60 ±20 75 50 300 110 0.73 450 -55 To 175 Unit V V A A A W W/℃ mJ ℃ Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.3 http://www.ncepower.com Pb Free Product NCE6075 Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 1.36 ℃/W Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) BVDSS IDSS IGSS VGS=0V ID=250μA VDS=60V,VGS=0V VGS=±20V,VDS=0V 60 68 - -- 1 - - ±100 V μA nA Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4) VGS(th) RDS(ON) gFS VDS=VGS,ID=250μA VGS=10V, ID=30A VDS=25V,ID=30A 23 - 9.1 20 - 4 11.5 - V mΩ S Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Clss Coss VDS=25V,VGS=0V, F=1.0MHz - 2350 - 237 - PF PF Crss - 205 - PF Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge td(on) tr td(off) tf Qg Qgs Qgd - 16 VDD=30V,ID=2A,RL=15Ω - 10 VGS=10V,RG=2.5Ω - 45 - 12 VDS=30V,ID=30A, VGS=10V - 50 - 12 - 16 - nS nS nS nS nC nC nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) Reverse Recovery Time Reverse Recovery Charge VSD VGS=0V,IS=30A - - 1.2 V IS - - 75 A trr TJ = 25°C, IF =75A - 28 Qrr di/dt = 100A/μs(Note3) - 49 nS nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) .


2N7002K NCE6075 RU6075R


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