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Pb Free Product
NCE6075
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE6075 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =60V,ID =75A RDS(ON) < 11.5mΩ @ VGS=10V
(Typ:9.1mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Schematic diagram
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED! 100% ∆Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE6075
NCE6075
TO-220-3L
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current Maximum Power Dissipation
IDM PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
60 ±20 75 50 300 110 0.73 450 -55 To 175
Unit
V V A A A W W/℃ mJ ℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.3
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Pb Free Product
NCE6075
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
1.36 ℃/W
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3)
BVDSS IDSS IGSS
VGS=0V ID=250μA VDS=60V,VGS=0V VGS=±20V,VDS=0V
60 68
-
--
1
- - ±100
V μA nA
Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4)
VGS(th) RDS(ON)
gFS
VDS=VGS,ID=250μA VGS=10V, ID=30A VDS=25V,ID=30A
23 - 9.1 20 -
4 11.5
-
V mΩ S
Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4)
Clss Coss
VDS=25V,VGS=0V, F=1.0MHz
- 2350 - 237
-
PF PF
Crss
- 205
-
PF
Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
td(on) tr
td(off) tf Qg
Qgs Qgd
- 16
VDD=30V,ID=2A,RL=15Ω - 10
VGS=10V,RG=2.5Ω
- 45
- 12
VDS=30V,ID=30A, VGS=10V
- 50 - 12 - 16
-
nS nS nS nS nC nC nC
Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
VGS=0V,IS=30A
- - 1.2
V
IS
- - 75
A
trr
TJ = 25°C, IF =75A
- 28
Qrr
di/dt = 100A/μs(Note3)
- 49
nS nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
.